Engineering and Materials and Computing and Informatics Research Centres Seminar

Multi-scaled device modelling simulations for novel electronic devices

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As part of the School of Science and Technology Joint seminar programme for the Engineering and Materials and Computing and Informatics Research Centres, Dr Vihar Georgiev, University of Glasgow, presents: Physics Seminar: Multi-scaled device modelling simulations for novel electronic devices.

  • From: Wednesday 31 May 2017, 1 am
  • To: Wednesday 31 May 2017, 2 pm
  • Location: CELS015, CELS, Nottingham Trent University, Clifton Campus, Clifton Lane, Nottingham, NG11 8NS

Past event

Event details

As part of the School of Science and Technology Joint seminar programme for the Engineering and Materials and Computing and Informatics Research Centres, Dr Vihar Georgiev, University of Glasgow, presents: Physics Seminar: Multi-scaled device modelling simulations for novel electronic devices.

Abstract

Recently interest in electronic, magnetic and optical materials based on inorganic, organic and hybrid nano-materials has increased significantly. Such new materials and novel device architectures have a potential to bring the technology and the research into the more than Moore and beyond Moore era [1]. The main quest is to find the best materials and devices for specific application. The most time efficient and cost effective approach to achieve that is to perform modelling and simulations of the numerous possibilities of materials and device architectures.
For example, the modelling and simulation of electronic devices has been a vital tool in driving the development and comprehensive understanding of the semiconductor physics and devices operation. Analysis using state-of-the-art device modelling helped the process of miniaturization of transistors through the past half a century. Importantly, modelling and simulation enhanced knowledge in the field and contributed to a deeper understanding of the critical issues surrounding the device scaling and operation.
To show the importance of the device modelling and simulations, in this seminar, I will present an exciting research carried out in the field of molecular electronics [2, 3] and quantum transport in next generation transistors for the semiconductor industry [4]. The main aim is to establish a link between the material properties, device architecture and device performance using hierarchical, multi-scaled simulation methodology and approach.


[1] R. K. Cavin, P. Lugli, and V. V. Zhirnov, "Science and Engineering Beyond Moore's Law," Proceedings of the IEEE, vol. 100, pp. 1720-1749, 2012.
[2] C. Busche, L. Vila-Nadal, J. Yan, H. N. Miras, D. L. Long, V. P. Georgiev, et al., "Design and fabrication of memory devices based on nanoscale polyoxometalate clusters," Nature, vol. 515, pp. 545-549, Nov 27 2014.
[3] V. P. Georgiev, S. Markov, L. Vila-Nadal, C. Busche, L. Cronin, and A. Asenov, "Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal-Oxide Storage," IEEE Transactions on Electron Devices, vol. 61, pp. 2019-2026, Jun 2014.
[4] A. Asenov, Y. Wang, B. Cheng, X. Wang, P. Asenov, T. Al-Ameri, et al., "Nanowire transistor solutions for 5nm and beyond," in 2016 17th International Symposium on Quality Electronic Design (ISQED), 2016, pp. 269-274.


About the speaker

Dr. Vihar Georgiev is a Lecturer and Deputy Group Leader of the Device Modelling Group (DMG) in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research involves the exploration of electronic structures and transport in various devices and materials based on nanoelectronic device simulations. He develops methods and computational methodology for simulating and understanding the device behaviour in a wide range of systems. In his recent work, he has investigated the optimization and the performance of molecular flash cells, current flow in small inorganic molecules and nanowire transistors. He has published around 40 journal and conference papers, one book chapter and he has given 30 oral talks worldwide since 2012. He is a member of the IEEE and a member of the Royal Society of Chemistry.

All welcome.

This seminar will be hosted by Dr Nikos Kalfagiannis / Dr Christopher Castleton.

Location details

Room/Building:

CELS015, CELS

Address:

Nottingham Trent University
Clifton Campus
Clifton Lane
Nottingham
NG11 8NS

Past event

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